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Nanoscale piezoelectric response of ZnO nanowires measured using a nanoindentation technique

机译:使用纳米压痕技术测量的ZnO纳米线的纳米级压电响应

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摘要

We report the piezoelectric properties of ZnO nanowires (NWs) obtained by using a nanoindenter with a conductive boron-doped diamond tip. The direct piezoelectric effect was measured by performing nanoindentations under load control, and the generated piezoelectric voltage was characterized as a function of the applied loads in the range 0.2-6 mN. The converse piezoelectric effect was measured by applying a DC voltage to the sample while there was a low applied force to allow the tip being always in physical contact with the NWs. Vertically aligned ZnO NWs were grown on inexpensive, flexible, and disposable paper substrates using a template-free low temperature aqueous chemical growth method. When using the nanoindenter to measure the direct piezoelectric effect, piezopotential values of up to 26 mV were generated. Corresponding measurement of the converse piezoelectric effect gave an effective piezoelectric coefficient d(33)(eff) of similar to 9.2 pm V-1. The ZnO NWs were also characterized using scanning electron microscopy, X-ray diffraction, and high-resolution transmission electron microscopy. The new nanoindentation approach provides a straightforward method to characterize piezoelectric material deposited on flexible and disposable substrates for the next generation of nanodevices.
机译:我们报告了通过使用具有导电掺硼金刚石尖端的纳米压头获得的ZnO纳米线(NWs)的压电性能。通过在负载控制下进行纳米压痕来测量直接压电效应,并将所产生的压电电压表征为所施加负载的函数,范围为0.2-6 mN。通过在样品上施加直流电压的同时施加较小的作用力,以使针尖始终与NW物理接触,来测量逆压电效应。垂直对齐的ZnO NW使用无模板的低温水性化学生长方法在廉价,柔性和一次性纸质基材上生长。当使用纳米压头测量直接压电效应时,会产生高达26 mV的压电势值。反向压电效应的相应测量得出有效压电系数d(33)(eff)类似于9.2 pm V-1。还使用扫描电子显微镜,X射线衍射和高分辨率透射电子显微镜对ZnO NW进行了表征。新的纳米压痕方法提供了一种简单的方法,可以表征沉积在柔性和一次性基板上的压电材料,以用于下一代纳米器件。

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